FERROELECTRIC GATE ORGANIC FIELD EFFECT TRANSISTOR, MEMORY ELEMENT USING THE SAME, AND METHOD OF MANUFACTURING THE FERROELECTRIC GATE ORGANIC FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To reduce a leakage current value between a ferroelectric film and a gate electrode, and also to improve insulation resistance.;SOLUTION: The ferroelectric gate organic field effect transistor includes a gate structure having an Si substrate 1, and at least an HfSiON film 2, a ferroelectric film 3, an HfSiON film 4, and a C₆₀ film 6 laminated on the Si substrate 1 in this order. The first absolute value of the sum of an Ra value and an Rms value on a surface at a side abutting on the HfSiON film 4 of the ferroelectric film 3 is not more than the film thickness of the HfSiON film 4. The second absolute value of the sum of the Ra value and Rms value on a surface at a side abutting on the C₆₀ film 6 of the HfSiON film 4 is not more than 3.0 nm.;COPYRIGHT: (C)2010,JPO&INPIT