首页> 外国专利> Lazy dislocation observation sheet of semiconductor wafer and Lazy dislocation observation method of semiconductor wafer using the same

Lazy dislocation observation sheet of semiconductor wafer and Lazy dislocation observation method of semiconductor wafer using the same

机译:半导体晶片的惰性位错观察片以及使用该惰性观察片的半导体晶片的惰性位错观察方法

摘要

The present invention relates to a lazi dislocation observation sheet for a semiconductor wafer and a lazi dislocation observation method for a semiconductor wafer using the same. In the present invention, observation cells at regular intervals are observed when the large wafer dislocations are observed. The semiconductor wafer is rotated at an angle to match the observation cell as well as the lazy dislocation observation sheet having the opening thereof. Firstly, the status of the lazi dislocations existing on a certain surface of the wafer can be easily identified. Second, the quality of the final wafer can be significantly improved by ensuring that appropriate measures are taken depending on the cause of the large dislocation.
机译:半导体晶片的拉兹位错观察片及使用该方法的半导体晶片的拉兹位错观察方法技术领域在本发明中,当观察到大的晶片位错时,以规则的间隔观察观察室。旋转半导体晶片一定角度以匹配观察盒以及具有其开口的惰性位错观察片。首先,可以容易地识别存在于晶片的特定表面上的惰性位错的状态。其次,通过确保根据大位错的原因采取适当的措施,可以显着提高最终晶片的质量。

著录项

  • 公开/公告号KR19990054223A

    专利类型

  • 公开/公告日1999-07-15

    原文格式PDF

  • 申请/专利权人 윤종용;

    申请/专利号KR19970074027

  • 发明设计人 김기정;

    申请日1997-12-26

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-22 02:17:02

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