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R.F DRY ETCHING APPARATUS

机译:射频干式烧录装置

摘要

[0001] The present invention relates to a dry apparatus for an aluminum oxide (AlF) contact portion, and conventionally, by keeping the temperature of hexo wood and pedestal at about 7 [deg.] C, Moisture is generated in the application area of the fuse, and moisture is formed in the contact area of the fuse and the fuse of the fuse due to the moisture, thereby causing the fuse damage to the etching process due to the loss of the fuse power .;However, in the present invention, a humidity comparator is provided for attaching a humidity sensor for detecting moisture to the AL / F applied portion and the AL / F-rod portion, and for comparing the humidity set value recognized by the system CPU to control the humidity removal, Wherein the humidity comparator controls the solenoid valve, the solenoid valve drives the pneumatic valve to supply a gas gas to the ALF and the ALF, wherein the gas comprises dry N 2 , It is possible to eliminate the moisture phenomenon occurring between the FPC and the FPC to completely eliminate the FPC loss in the process, thereby ensuring the reliability of the etching process.
机译:[0001]本发明涉及一种用于氧化铝(AlF)接触部分的干燥设备,并且常规地,通过将​​六角木和基座的温度保持在大约7℃,在涂覆区域中产生水分。熔丝由于水分而在熔丝的接触区域和熔丝的熔丝的接触区域中形成水分,从而由于熔丝功率的损失而引起熔丝对蚀刻工艺的损坏。然而,在本发明中湿度比较器被提供用于将湿度传感器附接到AL / F施加部分和AL / F杆部分上,并比较由系统CPU识别的湿度设定值以控制除湿,其中湿度比较器控制电磁阀,电磁阀驱动气动阀向ALF和ALF供气,其中的气体包含干燥的N 2 ,可以消除发生的湿气现象在t之间FPC和FPC可以完全消除工艺中的FPC损失,从而确保蚀刻工艺的可靠性。

著录项

  • 公开/公告号KR100186304B1

    专利类型

  • 公开/公告日1999-04-15

    原文格式PDF

  • 申请/专利权人 HYUNDAI MICRO ELECTRONICS CO.LTD.;

    申请/专利号KR19960012613

  • 发明设计人 이성수;

    申请日1996-04-24

  • 分类号H01L21/304;

  • 国家 KR

  • 入库时间 2022-08-22 02:16:06

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