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Magnetoresistance elements exhibiting thermally stable giant magnetoresistance effect

机译:表现出热稳定的巨磁阻效应的磁阻元件

摘要

Magnetoresist elements having good giant magnetoresistance characteristics of at least 6 percent are prepared by depositing alternating layers of magnetic alloy and non-magnetic copper or copper alloys in a thickness of 22-40 angstroms, which element, as deposited, exhibits ferromagnetic coupling. The multi-layer element, which may include up to 20 bilayers of magnetic material/non-magnetic material is then annealed at a temperature of about 250°-325° C. for a period of at least 15 minutes up to 10 hours. The resulting element exhibits good GMR characteristics which are thermally stable, and insensitive to minor variations in the thickness of the non-magnetic layer.
机译:通过沉积厚度为22-40埃的磁性合金和非磁性铜或铜合金的交替层来制备具有至少6%的良好巨磁阻特性的磁阻元件,该元素沉积时显示出铁磁耦合。然后可将最多包括20个磁性材料/非磁性材料双层的多层元件在约250°-325°C的温度下退火至少15分钟,直至10个小时。所得元件表现出良好的GMR特性,该特性是热稳定的,并且对非磁性层的厚度的微小变化不敏感。

著录项

  • 公开/公告号US5840420A

    专利类型

  • 公开/公告日1998-11-24

    原文格式PDF

  • 申请/专利权人 THE UNIVERSITY OF ALABAMA;

    申请/专利号US19960619350

  • 发明设计人 SYED A. HOSSAIN;MARTIN R. PARKER;

    申请日1996-03-21

  • 分类号G11B5/66;B32B5/16;

  • 国家 US

  • 入库时间 2022-08-22 02:09:34

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