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Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers
Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers
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机译:具有增强的介电性能的薄膜氧化钽层的制造方法以及采用该层的电容器
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摘要
The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO.sub.2 doping. Specifically, applicants have discovered sputtering Ta.sub.2 O.sub.5 in an oxygen-rich ambient at a temperature in excess of 450 C. and preferably in excess of 550. degree. C., produces a new crystalline phase thin film having enhanced dielectric properties.
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机译:本申请人发现了一种制造包含氧化钽的薄膜的方法,该方法可以在掺杂或不掺杂TiO 2的情况下提高介电常数。具体地说,申请人已经发现在富氧环境中在超过450℃,优选超过550度的温度下溅射Ta 2 O 5。 C.,生产具有增强的介电性能的新的结晶相薄膜。
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