Total internal reflection holography method and apparatus for lithography on 3-D spherical shaped integrated circuit

摘要

A photolithograhic method and apparatus for exposure of a spherical shaped semiconductor substrate according to a mask pattern of a primary spherical object mask in the manufacture of a spherical semiconductor device is disclosed. A secondary mask is provided, the secondary mask having stored therein a hologram recorded from the primary spherical object mask and containing spherical mask pattern information. The spherical shaped semiconductor substrate is then positioned with respect to the secondary mask in preparation for a photolithographic exposure. Lastly, a reference beam is directed upon the secondary mask for enabling inverse scattering of the hologram to produce an inverse scattered holographic image photolithographic exposure of the spherical shaped semiconductor substrate.