Organicity metal chemical vapor phase growth manner and organicity metal chemical vapor phase growth device

摘要

PROBLEM TO BE SOLVED: To provide an organic metal chemical vapor-growth method for uniformly depositing a high quality thin film or in a desired distributed state on a face of a substrate by protecting a substrate or a deposited material from damage caused by collision of organic metal compound(MO) ions. ;SOLUTION: A magnetic field is applied by a coil 5 in a way such that a line of magnetic force crosses vertically to a surface of a substrate 3, and the the flux density becomes larger as it comes nearer to the substrate 3. Then, an MO ion beam 9 to 0 to 45 degrees to the substrate 3 which aims at an upper point right over the substrate 3 is cast so as to form a metallic compound thin film on the surface of the substrate 3.;COPYRIGHT: (C)1999,JPO