Porous conversion modulo of silicon substrate and formation manner null of porous silicon

摘要

PURPOSE: To provide a method of forming a porous silicon layer having fine holes on a single crystal silicon substrate unifromly to the depth direction and with good control to the depth direction. ;CONSTITUTION: A high-energy ion beam 2 is emitted on a silicon substrate 1 and thereafter, a surface layer of the substrate 1 is modified into a porous silicon layer 3 using an anodizing method. Thereby, as the obtained layer 3 utilizes an emission defect due to the incided ion beam 2, which is the material of the layer 3, the porous silicon layer 3 having a desired hole diameter can be formed by controlling the kind of the ion beam, the energy and an injection amount. Moreover, it becomes possible to obtain the porous silicon layer 3, which has not the depth direction profile of the hole diameter and is very uniform.;COPYRIGHT: (C)1994,JPO&Japio