ELLIPSOMETRY AND ELLIPSOMETER, FORM MEASURING METHOD, AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To shorten the calculating time of the refractive index and thickness of a thin film by measuring the phase slippage and displacement of main axis defined by specific expressions, which are parameters of the elliptically polarized light reflected from a sample surface, and adapting multiple regression analysis. ;SOLUTION: The phase slippage Δ and main axis displacement Ψ defined by formulae I, II, which are parameters of the elliptically polarized light reflected from a sample surface subjected to a thin film measurement, and the thickness and refractive index of the thin film are determined from the respectively corresponding measured values. Namely, the thickness and refractive index are approximated as the function of the phase slippage Δ and main axis displacement Ψ, and the thickness of the refractive index of the thin film are determined by use of this function. This function is determined by multiple regression analysis having the measured structural parameter on a reference sample as an objective variable and the ellipso-parameters Δi, Ψi determined with respect to the reference sample (i=1-n/2) as illustrating variables. According to this, the calculation for determining the refractive index and thickness of the thin film is ended once, the calculating time is shortened, and an ellipsometry with short measuring time can be performed.;COPYRIGHT: (C)1999,JPO