FIELD EMISSION ELECTRON GUN CAPABLE OF MINIMIZING NONUNIFORM INFLUENCE OF SURROUNDING ELECTRIC POTENTIAL CONDITION ON ELECTRONS EMITTED FROM EMITTERS

摘要

On the insulating film to surround the emitter 104 formed on the predetermined portion of the substrate, the insulating film 105 formed on the remaining portion of the substrate, and the emitter having a space between each emitter and the first gate electrode 101. And a first voltage formed on the insulating film to surround the first gate electrode 101, to which the first voltage is applied, and the outer circumferential surface of the first gate electrode having a gap between the outer circumferential surfaces of the first gate electrode and the second gate electrode. In the field emission electron gun including the second gate electrode 102 to which a second less voltage is applied, the emitter is formed on the substrate except for the central portion of the substrate. The first gate electrode has an inner circumferential surface forming a hole 107 exposing a central portion of the insulating film positioned on the central portion of the substrate. The third gate electrode 106 may be formed on a central portion of the insulating layer having a third voltage less than the first voltage and having a different distance between the inner circumferential surface of the first gate electrode and the third gate electrode.