SINGLE SPLIT-GATE MOS TRANSISTOR ACTIVE PIXEL SENSOR CELL WITH AUTOMATIC BLOOMING AND WIDE DYNAMIC RANGE

摘要

The use of a single split gate MOS transistor and a reset gate reduces the size of the active pixel sensor cell. The split gate transistor includes an image collection region formed in the drain region and electrically connected to the floating gate of the transistor. Light energy striking the image acquisition region changes the potential of the floating gate, which changes the threshold voltage of the transistor. As a result, the current generated by the transistor is proportional to the received light energy.