Single MOS transistor with automatic blooming protection and wide dynamic range Active pixel detector cell

摘要

The size of the active pixel detector cell is reduced by using a single MOS transistor formed in the well to perform functions conventionally implemented by the photogate / photodiode, sense transistor and access transistor. The light energy striking the well changes the potential of the well, which again changes the threshold voltage of the transistor. As a result, the current generated by the transistor is proportional to the light receiving energy.