Deposition Uniformity Compensation Structure of Reactor for Semiconductor Low Pressure Chemical Vapor Deposition Equipment

摘要

The present invention relates to a deposition uniformity compensation structure of a reactor for semiconductor low pressure chemical vapor deposition equipment, conventionally the process gas injected from the gas supply pipe is sucked up from the bottom of the inner tube to the top of the bottom of the boat because the deposition process is made The wafers loaded on the wafer are deposited thicker than the wafers loaded on the top, resulting in uneven deposition between the top and bottom of the wafer, and the edges of each wafer come into contact with a greater amount of process gas than the center. There was also a problem in that the deposition film at the edge of the film was formed thicker than the center part. In the present invention, several gas flow paths are formed on the inner circumferential surface of the inner tube through which the reaction gas is supplied from the lower side to the upper side, and the lower support plate of the boat on which the wafer is loaded Is formed into a separate type, which is supplied to the inner tube By allowing a part of the gas to rise rapidly through the gas flow path, it improves the uniformity of deposition between the upper and lower portions of the wafer, and the gas flowing deeply into the center of the wafer through the lower support plate and between the center and the edge of the wafer. There is an effect that can improve the deposition uniformity.