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Nozzle Installation Structure of Semiconductor Low Pressure Chemical Vapor Deposition Equipment

机译:半导体低压化学气相沉积设备的喷嘴安装结构

摘要

The present invention relates to a nozzle installation structure of a semiconductor low pressure chemical vapor deposition apparatus, and in the related art, the inclination of the long nozzle provided on one inner side of the inner tube is generated, and there is a problem of being damaged by contact with the boat. The semiconductor low pressure chemical vapor deposition apparatus of the present invention forms long nozzle evacuation grooves 40 in the up and down directions on the inner surface of the inner tube 22, and inserts the long nozzle 25 in the long nozzle evacuation grooves 40. By fixing, the long nozzle is prevented from being inclined and hitting the boat during the process, thereby preventing the long nozzle from being damaged.
机译:半导体低压化学气相沉积装置的喷嘴安装结构技术领域本发明涉及一种半导体低压化学气相沉积装置的喷嘴安装结构,在现有技术中,产生了设置在内管的一个内侧上的长喷嘴的倾斜,并且存在一个问题。与船接触而损坏。本发明的半导体低压化学气相沉积设备在内管22的内表面上沿上下方向形成长喷嘴排空凹槽40,并且将长喷嘴25插入长喷嘴排空凹槽40中。因此,在该过程中,防止了长喷嘴倾斜和撞击舟皿,从而防止了长喷嘴的损坏。

著录项

  • 公开/公告号KR200303027Y1

    专利类型

  • 公开/公告日2003-03-28

    原文格式PDF

  • 申请/专利权人 주식회사 하이닉스반도체;

    申请/专利号KR19970034666U

  • 发明设计人 이승희;

    申请日1997-11-29

  • 分类号H01L21/205;

  • 国家 KR

  • 入库时间 2022-08-21 23:44:50

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