首页> 外国专利> THERMOCHEMICAL VAPOR PHASE VAPOR DEPOSITION APPARATUS AND LOW-TEMPERATURE SYNTHESIS OF CARBON NANOTUBE USING THE SAME

THERMOCHEMICAL VAPOR PHASE VAPOR DEPOSITION APPARATUS AND LOW-TEMPERATURE SYNTHESIS OF CARBON NANOTUBE USING THE SAME

机译:热化学相汽相沉积装置和碳纳米管的低温合成

摘要

PROBLEM TO BE SOLVED: To provide a low-temperature thermochemical vapor phase vapor deposition apparatus and a low-temperature synthesis method for a carbon nanotube using the same. SOLUTION: This thermochemical vapor phase vapor deposition apparatus includes a reaction tube 10 which has a gas inlet 12 and an air exit 14 and includes a first region for pyrolyzing the gas supplied from the gas inlet 12 adjacently to the gas inlet 12 side and a second region for synthesizing the carbon nanotube by using the gas pyrolyzed in the first region adjacently to the air exit 14 side, a first resistance heating element 24 which is disposed on the outer periphery of the reaction tube 10 and is used to maintain the first region at a first temperature, a second resistance heating element 26 which is disposed on the outer periphery of the reaction tube 10 and is used to maintain the second region at a second temperature lower then the first temperature and a thennally insulating material 22 which is disposed between the first resistance heating element 24 and the second resistance heating element 26 and is used to thermally insulate these materials. The carbon nanotube is synthesized on catalyst particulates by using a gaseous carbon source decomposed in the second region kept at the temperature lower than the temperature of the first region.
机译:解决的问题:提供一种低温热化学气相沉积设备和使用该设备的碳纳米管的低温合成方法。解决方案:该热化学气相沉积设备包括反应管10,该反应管具有进气口12和出气口14,并且包括用于热解从进气口12靠近进气口12一侧供应的气体的第一区域和第二区域。通过使用在第一区域中邻近于空气出口14侧热解的气体来热解碳纳米管的区域,第一电阻加热元件24设置在反应管10的外周上,并且用于将第一区域保持在第一温度,第二电阻加热元件26,其设置在反应管10的外周上,用于将第二区域保持在比第一温度低的第二温度;以及在其间设置的绝缘材料22。第一电阻加热元件24和第二电阻加热元件26用于使这些材料热绝缘。通过使用在保持低于第一区域的温度的第二区域中分解的气态碳源在催化剂颗粒上合成碳纳米管。

著录项

  • 公开/公告号JP2001032071A

    专利类型

  • 公开/公告日2001-02-06

    原文格式PDF

  • 申请/专利权人 LEE CHEOL JIN;ILJIN NANOTECH CO LTD;

    申请/专利号JP20000179984

  • 发明设计人 YOO JAE-EUN;LEE CHEOL JIN;

    申请日2000-06-15

  • 分类号C23C16/26;B01J23/26;B01J23/44;B01J23/74;B82B3/00;C01B31/02;

  • 国家 JP

  • 入库时间 2022-08-22 01:27:53

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