HIGH SATURATION CURRENT, LOW LEAKAGE CURRENT FERMI THRESHOLD FIELD EFFECT TRANSISTOR

摘要

-111-A high saturation current, low leakage, Fermithreshold field effect transistor includes apredetermined minimum doping concentration of thesource and drain facing the channel to maximize thesaturation current of the transistor. Source and draindoping gradient regions between the source/drain andthe channel, respectively, of thickness greater than300.ANG. are also provided. The threshold voltage of theFermi-FET may also be lowered from twice the Fermipotential of the substrate, while still maintainingzero static electric field in the channel perpendicularto the substrate, by increasing the dopingconcentration of the channel from that which produces athreshold voltage of twice the Fermi potential. Bymaintaining a predetermined channel depth, preferablyabout 600.ANG., the saturation current and thresholdvoltage may be independently varied by increasing thesource/drain doping concentration facing the channeland by increasing the excess carrier concentration inthe channel, respectively. A Fermi-FET having a gateinsulator thickness of less than 120.ANG., and a channellength of less than about 1µm can thereby provide a P-channel saturation current of at least 4 amperes percentimeter of channel width and an N-channel saturationcurrent of at least 7 amperes per centimeter of channelwidth, with a leakage current of less than 10picoamperes per micron of channel length using powersupplies of between 0 and 5 volts.