High-Saturation Current and Low Leakage Current Fermi-Delay Field Effect Transistor (HIGH SATURATION CURRENT, LOW LEAKAGE CURRENT FERMI THRESHOLD FIELD EFFECT TRANSISTOR)

摘要

The high saturation current low leakage Fermi delayed field effect transistor includes a doping concentration of a predetermined minimum of the source and drain facing the channel to maximize the saturation current of the transistor. A source and drain doping gradient region is also provided between the source / drain and the channel, each having a thickness of 300 A or more. By increasing the doping concentration of the channel that yields a fermi potential double the fermi potential from the channel, as long as the zero electrostatic field is still maintained in the channel perpendicular to the substrate, the threshold voltage of the Fermi FET is You can double the rate. By maintaining the predetermined channel depth (preferably about 600 A), the saturation current and the threshold voltage can be independently varied to increase the source / drain doping concentration facing the channel and to increase the excess carrier concentration in the channel . A Fermi-FET with a gate insulator thickness of less than 120 A and a channel length of less than about 1 uses a power source between 0 and 5 volts and has a leakage current of less than 10 picofaram per micron of channel length, A P-channel saturation current of at least 4 amperes and an N-channel saturation current of at least 7 amperes per centimeter of channel side.