Semiconductor device with a lateral pnp transistor and a vertical pnp transistor.

摘要

In a high-speed semiconductor integrated circuit, with npn and pnp transistors, an npn transistor 17 is formed in an n type epitaxial layer 4 formed on a semiconductor substrate 1, and a pnp transistor 20,22 is formed in an n type semiconductor region 26,27 formed in the n type epitaxial layer 4, the n type semiconductor region 26,27 having a higher impurity concentration than that of the n type epitaxial layer 4. IMAGE