SEMICONDUCTOR DEVICE FORMED ON SILICON SURFACE WITH 100 ORIENTATION, AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor having high current drive performance, and to provide a manufacturing method therefor.;SOLUTION: In the semiconductor device, a plurality of field effect transistors are formed on a silicon surface with a 100 plane orientation. The field effect transistor is arranged so that the direction from the source to drain of the field effect transistor turns in the 110 orientation.;COPYRIGHT: (C)2003,JPO