Method of filling substrate depressions with silicon oxide by high-density-plasma vapor phase deposition with participation of H2O2 or H2O as reaction gas

摘要

A first silicon-containing reaction gas and an oxygen precursor representing a further reaction gas are fed to the reaction chamber and a high-density plasma, preferably above 10¹⁶ ions/m³, is produced. Through at least partial substitution of the precursor O₂ that is normally used, H₂O₂ and/or H₂O are fed to the reaction chamber in order to further reduce the sputtering effects due to O₂ ions during the deposition, which lead to undesirable redepositions of the SiO₂ on side walls of the depression.