首页> 外国专利> PROCESS OF ACCELERATED GROWING OF LARGE-DIAMETER SEMICONDUCTOR CRYSTALS BY WAY OF THEIR COOLING THROUGH MELT AND EFFECT OF ELECTROMAGNETIC FIELDS ON BUILD-UP OF MELT SUPERCOOLING

PROCESS OF ACCELERATED GROWING OF LARGE-DIAMETER SEMICONDUCTOR CRYSTALS BY WAY OF THEIR COOLING THROUGH MELT AND EFFECT OF ELECTROMAGNETIC FIELDS ON BUILD-UP OF MELT SUPERCOOLING

机译:大直径半导体晶体通过融化冷却的加速过程以及电磁场对熔融超冷却建立的影响

摘要

FIELD: technology of production of semiconductor monocrystals of silicon. SUBSTANCE: electromagnetic fields setting melt in motion are utilized to build up supercooling in boundary layer between melt and face of growing crystal. As result heat is removed mainly through melt. Productivity of process with its optimization rises by factor of ten for crystals having diameters 300- 500 mm. EFFECT: raised productivity of process. 3 dwg _
机译:领域:硅半导体单晶的生产技术。实质:利用使运动融化的电磁场在融化物与生长晶体的表面之间的边界层中建立过冷。结果,热量主要通过熔体除去。对于直径为300-500 mm的晶体,其优化工艺的生产率提高了十倍。效果:提高了过程的生产率。 3 dwg _

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