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New inorganic intermetallic compounds with powder magnetoresistance effect and their composites are useful as magnetic field sensor, in spin electronics or for making memory reading head or tunneling magnetoresistance effect device
New inorganic intermetallic compounds with powder magnetoresistance effect and their composites are useful as magnetic field sensor, in spin electronics or for making memory reading head or tunneling magnetoresistance effect device
New inorganic intermetallic compounds (I) with PMR (powder magnetoresistance) effect contain at least 2 elements per formula unit and have an intrinsic field sensitivity of over 10% per 0.1 T at temperatures above 290 K. Independent claims are also included for the following: (1) New compounds of the formulae Co2Cr0.6Fe0.4Al, Co2Cr0.6Fe0.4Ga, Co2Cr0.2Mn0.8Al, Co2Mn0.8Cr0.2Al, Co2Mn0.8Cr0.2Ga, Co2MnGe0.5Ga0.5, Co2MnSi0.5Al0.5 Co2MnSn0.5In0.5, Co2Mn0.5Cr0.5Si, Co2Mn0.5Fe0.5Al, Co2Mn0.5Fe0.5Ga, Co2Mn0.5Fe0.5In, Fe2.5CoGe0.5Ga0.5, Fe2.5Co0.5Ga; (2) Composites of (I) and insulating or semiconducting substance(s); (3) The preparation of (I) from 2 or more different elements of such types and in such amounts that (I) crystallizes in cubic form with a maximum lattice parameter deformation of 10%, is classed with the Heusler phases and shows an electronic instability in the ! 0.5 eV region of the Fermi energy.
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