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Long distance optical signal transmission semiconductor laser having n type lower layer/quantum well active layer and p type upper layer with lower layer higher refraction index upper covering.
Long distance optical signal transmission semiconductor laser having n type lower layer/quantum well active layer and p type upper layer with lower layer higher refraction index upper covering.
The semiconductor laser has a substrate (1) with a lower layer (2) having an n type carrier structure. An active layer (4) forms a quantum well and an upper p type structure (6) is formed. The lower layer has a higher refraction index than the upper covering.
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