Method of fabrication of an Integrated circuit used mainly for radio-frequency applications, has bipolar transistors especially of the hetero-junction type, and insulated gate field effect transistors

摘要

When the fabrication of the insulated gate field effect transistor is started, then the bipolar transistor (BIP1,BIP2) is totally fabricated, before the resumption of fabrication of the insulated gate field effect transistor (MOS), and the step of common finishing of the two transistors is executed, including the common thermal reheating treatment (122) and common silication treatment.