High-frequency plasma CVD simulation method and high-frequency plasma CVD simulator

摘要

PROBLEM TO BE SOLVED: To provide an RF plasma CVD simulator and an RF plasma CVD simulation method, capable of providing optimum film deposition conditions with respect to the whole of the reactions incidental to plasma CVD, by using nonempirical, objective parameters without recourse to a rule of thumb. ;SOLUTION: In the RF plasma CVD simulator, the deposition simulation of a thin film formed on the surface of a substrate is carried out from respective data of gas species, gas pressure, gas flow rate, power-supply electric power, commercial frequency, electrode-to-substrate distance, substrate temperature, residence time of gas, volume of reaction vessel, internal surface area of reaction vessel, and area of substrate in an RF plasma CVD system. As to the reaction rate constant of plasma reaction, deposition simulation is performed by using the values determined from RF plasma analysis; as to the reaction rate constant of vapor phase/film surface reaction, deposition simulation is performed by using the values determined from offline quantum chemical computation and transition state theory. Deposition rate and film properties are computed by using these reaction rate constants.;COPYRIGHT: (C)2001,JPO