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Method of manufacturing a spin valve type thin film magnetic element and the thin-film magnetic head and a floating-type magnetic head and spin-valve thin-film magnetic element

机译:自旋阀型薄膜磁元件和薄膜磁头的制造方法以及浮置型磁头和自旋阀薄膜磁元件

摘要

PROBLEM TO BE SOLVED: To provide a spin valve type thin film magnetic element capable of reducing its asymmetry.;SOLUTION: The spin valve type thin film magnetic element 11 is characterized in the following. A first and a second fixed magnetic layers 21 and 51 are disposed on the both sides in a direction of the thickness of a free magnetic layer 41 which consists of a first and a second ferromagnetic free layers 42 and 43 and is wholly in a ferrimagnetic state. The first fixed magnetic layer 21 consists of a first and a second ferromagnetic pinned layers 22 and 23 and is wholly in the ferrimagnetic state. The second fixed magnetic layer 51 consists of a third, a fourth and a fifth ferromagnetic pinned layers 52, 53 and 54 and is wholly in the ferrimagnetic state. And the magnetization direction of the second ferromagnetic pinned layer 23 adjacent to the free magnetic layer 41 and the magnetization direction of the third ferromagnetic pinned layer 52 adjacent to the free magnetic layer 41 are anti-parallel to each other.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种能够减小其不对称性的自旋阀型薄膜磁性元件。解决方案:自旋阀型薄膜磁性元件11的特征如下。在由第一铁磁性自由层42和第二铁磁性自由层43构成的铁磁性状态的自由磁性层41的厚度方向的两侧,分别配置有第一固定磁性层21和第二固定磁性层51。 。第一固定磁性层21由第一和第二铁磁固定层22和23组成,并且完全处于亚铁磁状态。第二固定磁性层51由第三,第四和第五铁磁固定层52、53和54组成,并且整体上处于亚铁磁状态。并且与自由磁性层41相邻的第二铁磁性固定层23的磁化方向与与自由磁性层41相邻的第三铁磁性固定层52的磁化方向彼此反平行。版权:(C) 2001年

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