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Method of manufacturing a floating gate and method of manufacturing a non-volatile semiconductor memory device comprising the same
Method of manufacturing a floating gate and method of manufacturing a non-volatile semiconductor memory device comprising the same
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机译:制造浮栅的方法和制造包括该浮栅的非易失性半导体存储器件的方法
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摘要
A method of manufacturing a floating gate provides an enhancement for the efficiencies of electron discharge and injection. First, a conductive pattern, constituting the arefloating gateforeon, is formed on a substrate. A first insulation layer is formed on a sidewall of the conductive pattern, and then a second insulation layer is formed at an upper portion of the conductive pattern in ways that each increase the sharpness of an edge portion where the sidewall and upper portions of the conductive pattern meet. Therefore, electron transference from the floating gate to a control gate is facilitated.
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