Method and structure for wafer-level reliability electromigration and stress migration test by isothermal heater

摘要

Due to the test current and the test temperature of the wafer-level reliability depend on each other in those conventional arts, the result of electromigration etc is not sure cause of the test current or the test temperature and debases the reliability of the test result. In the present invention, the electromigration test and the stress migration test of the wafer-level reliability are independently controlled, respectively. Therefore, the cause of electromigration and the stress migration can be sure resulting from the test current or the test temperature respectively. Furthermore, the isothermal heater of the present invention not only can keep a whole test wafer at a more uniform test temperature, but also can offset the electromagnetism resulted from the current of the isothermal heater by the arrangement of circuits thereof for reducing the effect of the electromagnetism.