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SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
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机译:用于消除SOI MOSFET中的浮体效应的SOI半导体集成电路及其制造方法
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摘要
A silicon-on-insulator (SOI) integrated circuit and a method of fabricating the SOI integrated circuit are provided. At least one isolated transistor active region and a body line are formed on an SOI substrate. The transistor active region and the body line are surrounded by an isolation layer which is in contact with a buried insulating layer of the SOI substrate. A portion of the sidewall of the transistor active region is extended to the body line. Thus, the transistor active region is electrically connected to the body line through a body extension. The body extension is covered with a body insulating layer. An insulated gate pattern is formed over the transistor active region, and one end of the gate pattern is overlapped with the body insulating layer.
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