Radiation source for production of extreme ultraviolet radiation, useful in research into smaller transistors from the micrometer to the nanometer range, is based on dense hot plasma obtained by gas discharge

摘要

Radiation source for production of extreme ultraviolet (EUV) radiation based on dense hot plasma obtained by gas discharge contains two electrodes separated by insulators rotationally symmetrical electrode housings. The second electrode housing has a constriction and an electrode collar with a concentric insulating layer. Gas discharge takes place parallel to the symmetrical axis of the electrode housings.