Production manner of the ferroelectric thin film material and the ferroelectric thin film material and production manner of the dielectricity rag meter which uses the ferroelectric thin film material, being production manner of the dielectricity rag meter which uses the ferroelectric

摘要

PROBLEM TO BE SOLVED: To obtain a ferroelectric thin film which is appropriate for an infrared detection element showing high detection sensitivity in the neighborhood of room temperatures, by irradiating and excimer laser light to a target including Sr, Ba, Nb, La, and piling a ferroelectric thin film material on a substrate arranged to face the target. SOLUTION: An excimer laser light of pulses is radiated to a target including Sr, Ba, Nb, La. A ferroelectric thin film is piled on a substrate arranged to face the target in an ambience gas generating oxygen radicals by the excimer laser light. The ambience gas is N2 O gas. The thin film thus-formed has a strong orientation. That is, the film formed by ablation in the N2 O gas ambience is a (001) orientation film and a film formed in O2 is a (311) orientation film. The reason why the orientation of crystals is easy to control in the gas ambience is assumed to be a difference of activities of generated oxygen radicals.