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Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element
Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element
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机译:其中GaN基化合物表面发射半导体元件被GaN基化合物半导体激光元件激发的激光装置
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摘要
A laser apparatus includes a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light; and a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with the first laser light, and emitting second laser light. In addition, the surface-emitting semiconductor element may have a first mirror arranged on one side of the second active layer, and a second mirror may be arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator.
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