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Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
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机译:电荷转移配合物,包括电子供体和电子受体,作为电阻性存储器的基础
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摘要
Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.
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