Use of charge - transfer - complexes of an electron donor and an electron acceptor as a basis for resistive memory and memory cell containing these complex

摘要

Use of the compounds of the general formula i for the production of resistive memory cells: general formula i where:cyclic oligothiophenes be used,so that x = s, r₂ = nothing and r₂ linked to one another, and n = 6 – 30, r₁ independently of one another are = h, linear or branched alkyl chains with c1 - c10 atoms, which also may be substituted by heteroatoms.