METHOD FOR REMOVING PHOTORESIST IN SEMICONDUCTOR FABRICATION PROCESS BY GENERATING PLASMA FROM MIXED GAS CONTAINING HYDROGEN GAS

摘要

PURPOSE: A method for removing a photoresist in a semiconductor fabrication process by generating plasma from a mixed gas containing hydrogen gas is provided to prevent loss of silicon in a doped polysilicon formation process by restraining generation of an oxide layer in an ashing process. CONSTITUTION: A photoresist spin-coating process is performed to form a photoresist layer on a semiconductor substrate. The photoresist layer is exposed selectively. The exposed photoresist layer is developed to generate a photoresist pattern. An etching process is performed on an uncovered region of the semiconductor substrate or impurities are implanted therein. An ashing process is performed to remove the photoresist pattern. In the ashing process, the photoresist pattern is removed by generating a mixed gas containing hydrogen to plasma.