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MULTILAYERED STRUCTURE INCLUDING EPITAXIAL LAYER WITH LOW DISLOCATION DENSITY, SEMICONDUCTOR DEVICE USING THE SAME AND FABRICATING METHOD THEREOF TO EMBODY LOW DISLOCATION DENSITY AND REDUCE THICKNESS
MULTILAYERED STRUCTURE INCLUDING EPITAXIAL LAYER WITH LOW DISLOCATION DENSITY, SEMICONDUCTOR DEVICE USING THE SAME AND FABRICATING METHOD THEREOF TO EMBODY LOW DISLOCATION DENSITY AND REDUCE THICKNESS
PURPOSE: A multilayered structure including an epitaxial layer with a low dislocation density is provided to embody a low dislocation density and reduce its thickness by inserting an intermediate epitaxial layer into a hetero-epitaxial layer such that the intermediate epitaxial layer is thinner than the hetero-epitaxial layer. CONSTITUTION: A substrate is prepared. A hetero-epitaxial layer(200) is formed on the substrate, having a different lattice constant from that of the substrate. At least one intermediate epitaxial layer(300) is inserted into the hetero-epitaxial layer. The intermediate epitaxial layer has a different lattice constant from that of the hetero-epitaxial layer in contact with the intermediate epitaxial layer. The thickness of the intermediate epitaxial layer is smaller than that of the hetero-epitaxial layer to absorb the strain of the hetero-epitaxial layer.
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