FABRICATION METHOD OF HIGH-QUALITY LARGE-AREA GLASSY-OXIDE TARGET AND THE TARGET BY ITS FABRICATION METHOD

摘要

The invention sputtering deposition method for, in particular, a semiconductor or an oxide thin film production relates to a target according to the production process and method for preparing metal oxide target used in the sputtering vapor deposition or pulsed laser deposition for a semiconductor or an oxide thin film production or in the production process for producing a metal oxide target used in the pulsed laser deposition method, followed by shattering of the respective compositions the composition of the metal oxide in an appropriate size, and a mixing step of mixing a predetermined composition ratio; Receiving step of receiving the sample mixed in a predetermined ratio to the crucible and; And a step of melting by heating the crucible to a burner to melt the sample; Turning step of turning the furnace from the burner top during the melting step; Moving step of moving the sample is completely melted within the furnace to the molding plate and; And a cooling step of cooling the molten sample moved to the forming plate; And a method for producing high-quality, large-area Glacier oxide target characterized in that the configuration including a technical aspect; separating step of separating the cooled sample in the forming plate. The manufacture of high-quality large-area Glacier metal oxide target that by melting the metal oxide sample of appropriate composition to cool and then poured into a molded plate of varying sizes, complete with Glacier target type to significantly improve the target manufacturing time and effort, and cost depending It has the advantage that you can.