Fabrication method of high-quality large-area glassy-oxide target and the target by its fabrication method

摘要

metal present invention is used in sputtering deposition, or pulsed laser deposition for semiconductor or oxide thin films relates to the target according to the production method and a method for manufacturing an oxide target, in particular in the production method for producing metal oxide target used in the sputtering vapor deposition method or a pulsed laser deposition method for producing a thin film semiconductor or oxide, the metal oxide and the mixing step was pulverized to an appropriate size for each composition, mixing the composition at a predetermined ratio to create an; And a receiving step of receiving a mixed sample in the crucible by the predetermined ratio; And a melting step of melting a sample is heated by the burner to the furnace; And turning step of turning the crucible from the burner top during the melt phase; Mobile phase and to move the sample completely melted within the crucible to the mold plate; And a cooling step of cooling the molten sample is moved to the forming plate; The method of producing a high-quality large-area Glacier oxide target, characterized in that the technical configuration including a base; the separation step of separating the sample is cooled in the forming plate. Accordingly, by melting the metal oxide after the sample is poured in the molding composition of the titration plate of varying sizes produced by Glacier cooled to complete the target type target time and effort, that a significantly improved quality of the large-area metal oxide target cost manufacture Glacier There are benefits that can be.