The method for producing a group - iii - nitride - half conductor crystal, process for the production of a compound semiconductor based on gallium nitride, a compound semiconductor based on gallium nitride, a light emitting device consists of a compound semiconductor based on gallium nitride and a light source, which is used, the light-emitting semiconductor device

摘要

The method for producing a group - iii - nitride - half conductor crystal, comprising: a first step of depositing of particles of a group - iii - metal on a substrate surface; a second step of the nitriding of the particles in an atmosphere which contains a source of nitrogen; and a third step of using a gas - or vapor phases - growth process for the growth of a group - iii - nitride - half conductor crystal, the by_xGa_yAl_zN, wherein x + y + z = 1, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1 and 0 ≦ z ≦ 1, on the substrate surface, on which the particles were deposited.