FET comprises a source, a drain, and a canal region located in a substrate, and a barrier layer which separates the source and/or drain regions from the canal region

摘要

A FET comprises a source (42a), a drain (42b) and a canal region (46) in a substrate (10). The source and/or drain regions are separated from the canal region by a barrier layer (40). The latter consists of a nitride or oxide layer.