Standard cell e.g. gate, arrangement fabricating method for dynamic RAM semiconductor chip, involves automatically calculating new desired cell density when actual cell density exceeds maximum cell density, and finding new cell arrangement

摘要

The method involves making an automatic provisional standard cell arrangement using standard cells within a range, and determining the actual cell density of arrangement using a computing unit. A new desired cell density is automatically calculated using another unit, based on a given condition for the cell density when the actual cell density exceeds a maximum cell density. A new standard cell arrangement is found within the range. An independent claim is also included for an apparatus for executing a method of fabricating a standard cell arrangement of a dynamic RAM (DRAM) semiconductor chip.