Trench metal isolator semiconductor component, especially for high frequency use, is formed in semiconductor substrate with active and inactive regions; active region contains trench with conductive gate material, source region, body region

摘要

The metal isolator semiconductor device is formed in a semiconductor substrate and contains an active region and an inactive region, whereby the active region contains a first trench containing a first conductive gate material, a source region in the substrate and a body region next to a trench side wall, whereby the trench is clad with a thin insulation layer, and the inactive region contains a second trench containing a second conductive material, a relatively thin insulating layer on a side wall of the second trench, a relative thick insulating layer on its floor and a gate bus in contact with the second conductive material.