Semiconductor device e.g. metal oxide semiconductor field effect transistor, fabricating method, involves implanting impurity ions in source and drain regions near lateral faces of trench and in region near base region of each trench

摘要

The method involves arranging trenches formed in a substrate in a direction, where source and drain regions extend in parallel. Impurity ions are implanted in the regions near the lateral faces of each trench parallel to the direction and applied in the directions oblique with respect to the faces. The ions are implanted in a region near a base region of each trench and applied perpendicularly to the base region.