Thin-film transistor for active matrix-type organic light emitting device, has gate electrode having larger superimposition area with source electrode than drain electrode

摘要

The source electrode (216) and drain electrode (218) of a semiconductor layer (214) superimpose on the gate electrode (212) with the superimposition area between gate electrode and source electrode larger than the superimposition area between drain electrode and gate electrode. Independent claims are also included for the following: (1) manufacturing method of thin-film transistor; (2) active matrix-type organic electroluminescent element; and (3) manufacturing method of active matrix-type organic electroluminescent element.