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METHOD OF DEPOSITING ITO TRANSPARENT CONDUCTIVE FILM AND SUBSTRATE WITH ITO TRANSPARENT CONDUCTIVE FILM

机译:用ITO透明导电膜沉积ITO透明导电膜和基材的方法

摘要

PROBLEM TO BE SOLVED: To obtain a substrate with an ITO transparent conductive film in which the rise of a substrate temperature in depositing to the substrate with a thickness of 0.7 mm or less is reduced in the deposition of an ITO by an ion plating method using a plasma gun and the electrical, optical and mechanical characteristics are uniform.;SOLUTION: In a depositing method of obtaining the ITO transparent conductive film by the ion plating method using the plasma gun, the substrate 1 is brought into contact with an auxiliary substrate 2 and held at it, and while the substrate performs the heat transfer of the radiant heat received from the plasma to the auxiliary substrate, the deposition of the ITO transparent conductive film is performed to the substrate. In the case that the substrate is the substrate which mainly contains an organic macromolecule, an auxiliary substrate with a thickness of 0.2-10 mm is used. In the case that the substrate is the substrate which mainly contains glass, an auxiliary substrate with a thickness of 0.2-5 mm is used.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:获得具有ITO透明导电膜的基板,其中通过使用离子镀法的ITO沉积,降低了沉积到厚度为0.7mm或更小的基板中的基板温度的升高。解决方案:在使用等离子枪通过离子镀方法通过离子淀积获得ITO透明导电膜的沉积方法中,使基板1与辅助基板2接触。并保持在其上,并且在基板执行从等离子体接收的辐射热到辅助基板的热传递的同时,在基板上执行ITO透明导电膜的沉积。在基材是主要包含有机高分子的基材的情况下,使用厚度为0.2-10mm的辅助基材。如果基板是主要包含玻璃的基板,则使用厚度为0.2-5 mm的辅助基板。版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006164818A

    专利类型

  • 公开/公告日2006-06-22

    原文格式PDF

  • 申请/专利权人 CENTRAL GLASS CO LTD;

    申请/专利号JP20040356329

  • 发明设计人 OMOTO HIDEO;TAKAMATSU ATSUSHI;

    申请日2004-12-09

  • 分类号H01B13/00;C23C14/08;C23C14/32;C23C14/54;H01B5/14;

  • 国家 JP

  • 入库时间 2022-08-21 21:54:33

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