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METHOD OF DEPOSITING ITO TRANSPARENT CONDUCTIVE FILM AND SUBSTRATE WITH ITO TRANSPARENT CONDUCTIVE FILM
METHOD OF DEPOSITING ITO TRANSPARENT CONDUCTIVE FILM AND SUBSTRATE WITH ITO TRANSPARENT CONDUCTIVE FILM
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机译:用ITO透明导电膜沉积ITO透明导电膜和基材的方法
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摘要
PROBLEM TO BE SOLVED: To obtain a substrate with an ITO transparent conductive film in which the rise of a substrate temperature in depositing to the substrate with a thickness of 0.7 mm or less is reduced in the deposition of an ITO by an ion plating method using a plasma gun and the electrical, optical and mechanical characteristics are uniform.;SOLUTION: In a depositing method of obtaining the ITO transparent conductive film by the ion plating method using the plasma gun, the substrate 1 is brought into contact with an auxiliary substrate 2 and held at it, and while the substrate performs the heat transfer of the radiant heat received from the plasma to the auxiliary substrate, the deposition of the ITO transparent conductive film is performed to the substrate. In the case that the substrate is the substrate which mainly contains an organic macromolecule, an auxiliary substrate with a thickness of 0.2-10 mm is used. In the case that the substrate is the substrate which mainly contains glass, an auxiliary substrate with a thickness of 0.2-5 mm is used.;COPYRIGHT: (C)2006,JPO&NCIPI
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