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METHOD FOR EVALUATING IN-PLANE DISTRIBUTION OF RESIST PATTERN DIMENSIONS, METHOD FOR PRODUCING PHOTOMASK BLANK, PHOTOMASK BLANK, AND MANAGEMENT METHOD FOR RESIST PATTERN FORMING PROCESS
METHOD FOR EVALUATING IN-PLANE DISTRIBUTION OF RESIST PATTERN DIMENSIONS, METHOD FOR PRODUCING PHOTOMASK BLANK, PHOTOMASK BLANK, AND MANAGEMENT METHOD FOR RESIST PATTERN FORMING PROCESS
PROBLEM TO BE SOLVED: To provide a simple method for evaluating the in-plane distribution of the resist pattern dimensions of a photomask blank coated with a resist, and to provide a process management method for a lithography line for mask production.;SOLUTION: In the method for evaluating the in-plane distribution of resist pattern dimensions, the resist film thickness of a photomask blank coated with a resist is measured at a plurality of points; the photomask blank is subjected to development including processing with a developer without exposing; and the resist film thickness of the photomask blank is remeasured at a plurality of points to obtain the in-plane distribution of the variations in the resist film thickness of the photomask blank, from the in-plane distribution, the photomask blank is subjected to exposure and development, and the quality of the in-plane distribution of the resulting resist pattern dimensions is. By utilizing the evaluating method, a processing is managed so that the conditions for the development are optimum.;COPYRIGHT: (C)2006,JPO&NCIPI
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