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Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same
Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same
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机译:半导体器件和功率转换器,驱动逆变器,通用逆变器以及使用该器件的大功率高频通信设备
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摘要
In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the end semiconductor device can be improved by decreasing the roughness of the silicon carbide semiconductor substrate surface. The semiconductor device of this invention is a Schottky barrier diode or a p-n type diode comprising at least one of a p type semiconductor region and n type semiconductor region selectively formed in a silicon carbide semiconductor region having an outermost surface layer surface that is a (000-1) surface or a surface inclined at an angle to the (000-1) surface, and a metal electrode formed on the outermost surface layer surface, that controls a direction in which electric current flows in a direction perpendicular to the outermost surface layer surface from application of a voltage to the metal electrode.
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