The present invention provides a nitride-based semiconductor devices, electrical, optical properties and improving the reliability can be improved relates to a process for the production of nitride-based semiconductor device of a substrate to remove. ; method of manufacturing a nitride-based light emitting device according to the present invention, the buffer layer and the first conductive layer on a substrate, an active layer, a step of forming an element layer made of the second conductive layer, a layer in the device After forming the first electrode, the first electrode, the element layer and forming a groove by removing a portion of the buffer layer, a step of adhering a conductive mounting layer on the first electrode wherein the groove is formed, the substrate a step of exposing the lower surface of the buffer layer by removing, after forming a second electrode on the exposed buffer layer, characterized by comprising a step of separation into individual devices. ; Thus, the method of manufacturing a nitride-based semiconductor device according to the present invention are the first and second electrodes are formed on upper and lower surfaces of the device can realize the thinning and weight reduction of the device, especially in the case of the light emitting element can improve the light output through the light emitting area zoom, the heat generated in the active layer is directly transmitted through the light emission when the lower frame has the advantage that it can improve reliability.
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