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Charge part chen beam exposure method and charge part in front of the direction of the same beam exposure
Charge part chen beam exposure method and charge part in front of the direction of the same beam exposure
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机译:带电部分的陈束曝光方法和带电部分在同一束曝光方向的前面
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摘要
The basis of the present invention is a charged particle beam exposure method comprising the steps of: (a) generating a plurality of areas within the sub-fields; (b) determining the pattern density within each of the areas, and correcting the pattern density in accordance with the pattern density of areas surrounding the area and the distance between areas; (c) generating a supplementary exposure pattern in the area when the corrected pattern density for the area is lower than a prescribed reference exposure density; and (d) exposing the material in accordance with exposure data comprising the supplementary exposure pattern data appended to the pattern data. A first invention comprises a step for further generating a supplementary exposure pattern in areas lying between pattern existing regions where the patterns are located, and having a pattern density higher than the reference exposure density, when the distance between the pattern existing regions is greater than a prescribed reference distance.
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