Semiconductor laser, has cladding layer supported by semiconductor substrate, and p-type contact layer in which aluminum composition is controlled so that contact layer has optical bandgap larger than that of active layer

摘要

The laser has a cladding layer supported by a semiconductor substrate (1). An active layer is provided on the cladding layer. Another cladding layer is provided on the active layer. A p-type contact layer (8) controls the aluminum composition so that the contact layer has an optical bandgap larger than that of the active layer. A guide layer is provided between the active layer and the former cladding layer.